World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
30
Citations
3139
World Ranking
6855
National Ranking
104

W K Chim publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where W K Chim sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 162 publications — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

W K Chim D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where W K Chim sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 30 D-Index — 3rd percentile

3% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Best Publications

  • Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator- semiconductor structure

    W. K. Choi;W. K. Chim;C. L. Heng;L. W. Teo

  • Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage Layer

    Yan-Ny Tan;W.-K. Chim;Byung Jin Cho;Wee-Kiong Choi

  • Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation

    Yan Ny Tan;W.K. Chim;Wee Kiong Choi;Moon Sig Joo

  • Fabrication of Silicon Nanowires with Precise Diameter Control Using Metal Nanodot Arrays as a Hard Mask Blocking Material in Chemical Etching

    Jinquan Huang;Sing Yang Chiam;Hui Huang Tan;Shijie Wang

  • Highly ordered CdS nanoparticle arrays on silicon substrates and photoluminescence properties

    Y. Lei;W. K. Chim;H. P. Sun;G. Wilde

  • Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure

    L. W. Teo;W. K. Choi;W. K. Chim;V. Ho

  • High-k HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operation

    Yan Ny Tan;Wai Kin Chim;Wee Kiong Choi;Moon Sig Joo

  • Traps in germanium nanocrystal memory and effect on charge retention : Modeling and experimental measurements

    B. H. Koh;E. W. H. Kan;W. K. Chim;W. K. Choi

  • Low-Frequency Noise in Layered ReS2 Field Effect Transistors on HfO2 and Its Application for pH Sensing.

    Wugang Liao;Wei Wei;Yu Tong;Wai Kin Chim

  • Ultralow Thermal Conductivity of Single-Crystalline Porous Silicon Nanowires

    Yunshan Zhao;Lina Yang;Lingyu Kong;Mui Hoon Nai

  • Influence of reductant and germanium concentration on the growth and stress development of germanium nanocrystals in silicon oxide matrix

    H G Chew;F Zheng;W K Choi;W K Choi;W K Chim;W K Chim

  • Synthesis of germanium nanodots on silicon using an anodic alumina membrane mask

    Z Chen;Y Lei;H.G Chew;L.W Teo

  • Role of oxygen for highly conducting and transparent gallium-doped zinc oxide electrode deposited at room temperature

    L. M. Wong;S. Y. Chiam;J. Q. Huang;S. J. Wang

  • Extraction of metal-oxide-semiconductor field-effect-transistor interface state and trapped charge spatial distributions using a physics-based algorithm

    Unknown

  • Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching.

    Lingyu Kong;Yi Song;Jeong Dong Kim;Lan Yu

  • Minimizing Isolate Catalyst Motion in Metal-Assisted Chemical Etching for Deep Trenching of Silicon Nanohole Array.

    Lingyu Kong;Yunshan Zhao;Binayak Dasgupta;Binayak Dasgupta;Yi Ren

  • Evidences for redox reaction driven charge transfer and mass transport in metal-assisted chemical etching of silicon.

    Lingyu Kong;Binayak Dasgupta;Binayak Dasgupta;Yi Ren;Parsian K. Mohseni

  • Germanium diffusion and nanocrystal formation in silicon oxide on silicon substrate under rapid thermal annealing

    Unknown

  • Interfacial and bulk properties of zirconium dioxide as a gate dielectric in metal–insulator–semiconductor structures and current transport mechanisms

    Unknown

  • Self-Anchored Catalyst Interface Enables Ordered Via Array Formation from Submicrometer to Millimeter Scale for Polycrystalline and Single-Crystalline Silicon

    Jeong Dong Kim;Munho Kim;Lingyu Kong;Parsian K. Mohseni

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Related Online Degrees & Career Pathways

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