World's Best Scientists 2026 revealed!
M Schroter

M Schroter

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
34
Citations
4598
World Ranking
5830
National Ranking
89

Best Publications

  • A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design

    S.P. Voinigescu;M.C. Maliepaard;J.L. Showell;G.E. Babcock

  • VBIC95, the vertical bipolar inter-company model

    Unknown

  • Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz

    S.H.-M. Jen;C.C. Enz;D.R. Pehlke;M. Schroter

  • SiGe HBT Technology: Future Trends and TCAD-Based Roadmap

    Michael Schroter;Tommy Rosenbaum;Pascal Chevalier;Bernd Heinemann

  • Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

    Pascal Chevalier;Michael Schroter;Colombo R. Bolognesi;Vincenzo d'Alessandro

  • Compact Hierarchical Bipolar Transistor Modeling With HiCUM

    Unknown

  • Compact Hierarchical Bipolar Transistor Modeling with Hicum

    Unknown

  • On the origin of 1/f noise in polysilicon emitter bipolar transistors

    M. Jamal Deen;S. L. Rumyantsev;M. Schroter

  • Physical and Electrical Performance Limits of High-Speed SiGeC HBTs—Part I: Vertical Scaling

    Unknown

  • Physics-based minority charge and transit time modeling for bipolar transistors

    Unknown

  • Towards an optimal contact metal for CNTFETs

    Artem Fediai;Dmitry A. Ryndyk;Gotthard Seifert;Sven Mothes

  • Simulation and modeling of the low-frequency base resistance of bipolar transistors and its dependence on current and geometry

    Unknown

  • Physics- and process-based bipolar transistor modeling for integrated circuit design

    Unknown

  • Threshold Voltage Variation in SOI Schottky-Barrier MOSFETs

    Min Zhang;J. Knoch;Shi-Li Zhang;S. Feste

  • Toward Linearity in Schottky Barrier CNTFETs

    Unknown

  • A compact physical large-signal model for high-speed bipolar transistors at high current densities—Part II: Two-dimensional model and experimental results

    Unknown

  • A generalized integral charge-control relation and its application to compact models for silicon-based HBT's

    Unknown

  • A compact bipolar transistor model for very-high-frequency applications with special regard to narrow emitter stripes and high current densities

    Unknown

  • Experimental determination of the internal base sheet resistance of bipolar transistors under forward-bias conditions

    Unknown

  • CNTFET Technology for RF Applications: Review and Future Perspective

    Martin Hartmann;Sascha Hermann;Phil F. Marsh;Christopher Rutherglen

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