M. Passlack

Best Publications

• Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling

  M. Passlack;M. Hong;J.P. Mannaerts;R.L. Opila

  222
  Citations

• Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$ , and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$

  R.J.W. Hill;D.A.J. Moran;Xu Li;Haiping Zhou

  166
  Citations

• On the interface state density at In0.53Ga0.47As/oxide interfaces

  G. Brammertz;H.-C. Lin;M. Caymax;M. Meuris

  150
  Citations

• Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor

  M. Passlack;J.K. Abrokwah;R. Droopad;Zhiyi Yu

  127
  Citations

• High Mobility III-V MOSFETs For RF and Digital Applications

  M. Passlack;P. Zurcher;K. Rajagopalan;R. Droopad

  114
  Citations

• Enhancement-Mode GaAs n-Channel MOSFET

  K. Rajagopalan;J. Abrokwah;R. Droopad;M. Passlack

  103
  Citations

• Germanium p-Channel FinFET Fabricated by Aspect Ratio Trapping

  Mark J. H. van Dal;Georgios Vellianitis;Blandine Duriez;Gerben Doornbos

  79
  Citations

• High mobility NMOSFET structure with high-/spl kappa/ dielectric

  Unknown

  79
  Citations

• Demonstration of scaled Ge p-channel FinFETs integrated on Si

  M.J.H. van Dal;G. Vellianitis;G. Doornbos;B. Duriez

  77
  Citations

• Benchmarking of III–V n-MOSFET Maturity and Feasibility for Future CMOS

  Unknown

  70
  Citations

• An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III–V NMOS

  R. Oxland;S. W. Chang;Xu Li;S. W. Wang

  63
  Citations

• Electronic properties of adsorbates on GaAs(001)-c(2×8)∕(2×4)

  Darby L. Winn;Michael J. Hale;Tyler J. Grassman;Jonathan Z. Sexton

  62
  Citations

• Suitability Study of Oxide/Gallium Arsenide Interfaces for MOSFET Applications

  Matthias Passlack;Ravi Droopad;Guy Brammertz

  61
  Citations

• Implant-free high-mobility flatband MOSFET: principles of operation

  M. Passlack;K. Rajagopalan;J. Abrokwah;R. Droopad

  59
  Citations

• ADVANCING METAL-OXIDE-SEMICONDUCTOR THEORY : STEADY-STATE NONEQUILIBRIUM CONDITIONS

  M. Passlack;M. Hong;E. F. Schubert;G. J. Zydzik

  52
  Citations

• 1-$\mu\hbox{m}$ Enhancement Mode GaAs N-Channel MOSFETs With Transconductance Exceeding 250 mS/mm

  Unknown

  51
  Citations

• Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs

  T. Vasen;P. Ramvall;A. Afzalian;G. Doornbos

  47
  Citations

• Scaled p-channel Ge FinFET with optimized gate stack and record performance integrated on 300mm Si wafers

  Unknown

  44
  Citations

• Methodology for Development of High-κ Stacked Gate Dielectrics on III–V Semiconductors

  Unknown

  38
  Citations

• Germanium-based transistors for future high performance and low power logic applications

  Yee-Chia Yeo;Xiao Gong;Mark J. H. van Dal;Georgios Vellianitis

  36
  Citations