J.L. Hudgins

Best Publications

• An assessment of wide bandgap semiconductors for power devices

  J.L. Hudgins;G.S. Simin;E. Santi;M.A. Khan

  711
  Citations

• Circuit simulator models for the diode and IGBT with full temperature dependent features

  P.R. Palmer;E. Santi;J.L. Hudgins;Xiaosong Kang

  223
  Citations

• Modeling of Wide Bandgap Power Semiconductor Devices—Part I

  Unknown

  209
  Citations

• Transient Electrothermal Simulation of Power Semiconductor Devices

  Bin Du;J.L. Hudgins;E. Santi;A.T. Bryant

  198
  Citations

• Exploration of Power Device Reliability using Compact Device Models and Fast Electro-Thermal Simulation

  A.T. Bryant;P.A. Mawby;P.R. Palmer;E. Santi

  193
  Citations

• Modeling of Wide-Bandgap Power Semiconductor Devices—Part II

  Enrico Santi;Kang Peng;Homer Alan Mantooth;Jerry L. Hudgins

  173
  Citations

• Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models

  A.T. Bryant;Xiaosong Kang;E. Santi;P.R. Palmer

  170
  Citations

• High Power Current Sensorless Bidirectional 16-Phase Interleaved DC-DC Converter for Hybrid Vehicle Application

  Unknown

  160
  Citations

• New Developments in Gallium Nitride and the Impact on Power Electronics

  M.A. Khan;G. Simin;S.G. Pytel;A. Monti

  156
  Citations

• Characterization and modeling of high-voltage field-stop IGBTs

  Xiaosong Kang;A. Caiafa;E. Santi;J.L. Hudgins

  128
  Citations

• A Real-Time Thermal Model for Monitoring of Power Semiconductor Devices

  Tanya Kirilova Gachovska;Bo Tian;Jerry L. Hudgins;Wei Qiao

  113
  Citations

• Modeling of IGBT resistive and inductive turn-on behavior

  L. Lu;S.G. Pytel;E. Santi;A.T. Bryant

  113
  Citations

• Review of technologies for current-limiting low-voltage circuit breakers

  C. W. Brice;R. A. Dougal;J. L. Hudgins

  104
  Citations

• Power Electronic Devices in the Future

  Unknown

  99
  Citations

• Parameter extraction for a physics-based circuit simulator IGBT model

  X. Kang;E. Santi;J.L. Hudgins;P.R. Palmer

  77
  Citations

• Power SiC DMOSFET Model Accounting for Nonuniform Current Distribution in JFET Region

  Ruiyun Fu;A. Grekov;J. Hudgins;A. Mantooth

  75
  Citations

• Physical Modeling of Fast p-i-n Diodes With Carrier Lifetime Zoning, Part I: Device Model

  A.T. Bryant;Liqing Lu;E. Santi;P.R. Palmer

  74
  Citations

• Wide and narrow bandgap semiconductors for power electronics: A new valuation

  Unknown

  69
  Citations

• A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility

  E Platania;Zhiyang Chen;Filippo Chimento;Alexander E Grekov

  68
  Citations

• Simulation and optimisation of diode and IGBT interaction in a chopper cell using MATLAB and Simulink

  P.R. Palmer;A.T. Bryant;J. Hudgins;E. Santi

  62
  Citations