A.F. Tasch

A.F. Tasch publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where A.F. Tasch sits on this spectrum.

A.F. Tasch D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where A.F. Tasch sits on this spectrum.

Best Publications

• Ion beams in silicon processing and characterization

  E. Chason;S. T. Picraux;J. M. Poate;J. O. Borland

  368
  Citations

• Correlation between silicon hydride species and the photoluminescence intensity of porous silicon

  C. Tsai;K. H. Li;D. S. Kinosky;R. Z. Qian

  327
  Citations

• In situ cleaning of silicon substrate surfaces by remote plasma-excited hydrogen

  B. Anthony;L. Breaux;T. Hsu;S. Banerjee

  176
  Citations

• Electrical and reliability properties of PZT thin films for ULSI DRAM applications

  J. Carrano;C. Sudhama;V. Chikarmane;J. Lee

  116
  Citations

• A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFETs

  Unknown

  109
  Citations

• Single Crystal Silicon‐on‐Oxide by a Scanning CW Laser Induced Lateral Seeding Process

  Unknown

  101
  Citations

• Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics

  Unknown

  101
  Citations

• A new approach to verify and derive a transverse-field-dependent mobility model for electrons in MOS inversion layers

  H. Shin;A.F. Tasch;C.M. Maziar;S.K. Banerjee

  99
  Citations

• Homoepitaxial films grown on Si (100) at 150 °C by remote plasma‐enhanced chemical vapor deposition

  L. Breaux;B. Anthony;T. Hsu;Sanjay K Banerjee

  99
  Citations

• Physically-based models for effective mobility and local-field mobility of electrons in MOS inversion layers

  Unknown

  91
  Citations

• Modeling of direct tunneling current through gate dielectric stacks

  S. Mudanai;Yang-Yu Fan;Qiqing Ouyang;A.F. Tasch

  89
  Citations

• Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide

  Unknown

  83
  Citations

• Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs

  S. Mudanai;L.F. Register;A.F. Tasch;S.K. Banerjee

  80
  Citations

• Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers

  Unknown

  79
  Citations

• Memory cell and technology issues for 64- and 256-Mbit one-transistor cell MOSD DRAMs

  Unknown

  77
  Citations

• Photodetectors fabricated from rapid‐thermal‐oxidized porous Si

  Chaochieh Tsai;K.‐H. Li;Joe C. Campbell;Al Tasch

  74
  Citations

• Very low defect remote hydrogen plasma clean of Si (100) for homoepitaxy

  B. Anthony;T. Hsu;L. Breaux;R. Qian

  72
  Citations

• A pseudo-lucky electron model for simulation of electron gate current in submicron NMOSFET's

  Unknown

  70
  Citations

• Two-dimensional bandgap engineering in a novel Si-SiGe pMOSFET with enhanced device performance and scalability

  Q. Ouyang;X.D. Chen;S. Mudanai;D.L. Kencke

  69
  Citations

• Cleaning and passivation of the Si(100) surface by low temperature remote hydrogen plasma treatment for Si epitaxy

  T. Hsu;B. Anthony;R. Qian;J. Irby

  66
  Citations