A.F. Tasch

Best Publications

• Ion beams in silicon processing and characterization

  E. Chason;S. T. Picraux;J. M. Poate;J. O. Borland

  368
  Citations

• Correlation between silicon hydride species and the photoluminescence intensity of porous silicon

  C. Tsai;K. H. Li;D. S. Kinosky;R. Z. Qian

  327
  Citations

• In situ cleaning of silicon substrate surfaces by remote plasma-excited hydrogen

  B. Anthony;L. Breaux;T. Hsu;S. Banerjee

  176
  Citations

• Electrical and reliability properties of PZT thin films for ULSI DRAM applications

  J. Carrano;C. Sudhama;V. Chikarmane;J. Lee

  116
  Citations

• A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFETs

  Unknown

  109
  Citations

• Single Crystal Silicon‐on‐Oxide by a Scanning CW Laser Induced Lateral Seeding Process

  Unknown

  101
  Citations

• Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics

  Unknown

  101
  Citations

• A new approach to verify and derive a transverse-field-dependent mobility model for electrons in MOS inversion layers

  H. Shin;A.F. Tasch;C.M. Maziar;S.K. Banerjee

  99
  Citations

• Homoepitaxial films grown on Si (100) at 150 °C by remote plasma‐enhanced chemical vapor deposition

  L. Breaux;B. Anthony;T. Hsu;Sanjay K Banerjee

  99
  Citations

• Physically-based models for effective mobility and local-field mobility of electrons in MOS inversion layers

  Unknown

  91
  Citations

• Modeling of direct tunneling current through gate dielectric stacks

  S. Mudanai;Yang-Yu Fan;Qiqing Ouyang;A.F. Tasch

  89
  Citations

• Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide

  Unknown

  83
  Citations

• Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs

  S. Mudanai;L.F. Register;A.F. Tasch;S.K. Banerjee

  80
  Citations

• Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers

  Unknown

  79
  Citations

• Memory cell and technology issues for 64- and 256-Mbit one-transistor cell MOSD DRAMs

  Unknown

  77
  Citations

• Photodetectors fabricated from rapid‐thermal‐oxidized porous Si

  Chaochieh Tsai;K.‐H. Li;Joe C. Campbell;Al Tasch

  74
  Citations

• Very low defect remote hydrogen plasma clean of Si (100) for homoepitaxy

  B. Anthony;T. Hsu;L. Breaux;R. Qian

  72
  Citations

• A pseudo-lucky electron model for simulation of electron gate current in submicron NMOSFET's

  Unknown

  70
  Citations

• Two-dimensional bandgap engineering in a novel Si-SiGe pMOSFET with enhanced device performance and scalability

  Q. Ouyang;X.D. Chen;S. Mudanai;D.L. Kencke

  69
  Citations

• Cleaning and passivation of the Si(100) surface by low temperature remote hydrogen plasma treatment for Si epitaxy

  T. Hsu;B. Anthony;R. Qian;J. Irby

  66
  Citations