World's Best Scientists 2026 revealed!
A. K. Raychaudhuri

A. K. Raychaudhuri

D-Index & Metrics

Materials Science

D-Index
62
Citations
13872
World Ranking
6470
National Ranking
88

A. K. Raychaudhuri publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where A. K. Raychaudhuri sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 399 publications — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

A. K. Raychaudhuri D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where A. K. Raychaudhuri sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 62 D-Index — 51st percentile

51% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

A. K. Raychaudhuri is affiliated with the Science and Engineering Research Board in India. Their research primarily spans the field of Materials Science with a focus on subfields including Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, and Electrical and Electronic Engineering.

The main topics covered in their work include:

  • Advanced Condensed Matter Physics
  • Electronic and Structural Properties of Oxides
  • Magnetic and transport properties of perovskites and related materials
  • Organic and Molecular Conductors Research
  • Chalcogenide Semiconductor Thin Films
  • Solid-state spectroscopy and crystallography

Their recent published papers include two specific works:

  • "Disorder-induced crossover of Mott insulator to weak Anderson localized regime in an argon-irradiated NdNiO3 film" (2022) published in Physical Review B
  • "Charge density wave transition and unusual resistance hysteresis in vanadium disulfide (1T-VS2) microflakes" (2024) published in Physica Scripta

Frequent co-authors collaborating with A. K. Raychaudhuri are:

  • Achintya Singha
  • Ravindra Singh Bisht
  • Sudipta Chatterjee
  • Sreyan Raha
  • D. Kabiraj

The venues in which they have published include:

  • Physical Review B
  • Physica Scripta

Best Publications

  • COLOSSAL MAGNETORESISTANCE, CHARGE ORDERING AND OTHER NOVEL PROPERTIES OF MANGANATES AND RELATED MATERIALS

    C. N. R. Rao;A. K. Raychaudhuri

  • Structure, electron-transport properties, and giant magnetoresistance of hole-doped LaMnO 3 systems

    R. Mahendiran;S. K. Tiwary;A. K. Raychaudhuri;T. V. Ramakrishnan

  • Effect of particle size on the giant magnetoresistance of La0.7Ca0.3MnO3

    R. Mahesh;R. Mahendiran;A. K. Raychaudhuri;C. N. R. Rao

  • Temperature dependence of the resistance of metallic nanowires of diameter≥15nm: applicability of Bloch-Grüneisen theorem

    Aveek Bid;Achyut Bora;A. K. Raychaudhuri;A. K. Raychaudhuri

  • Electrical transport, magnetism, and magnetoresistance in ferromagnetic oxides with mixed exchange interactions: A study of the La 0.7 Ca 0.3 Mn 1 − x Co x O 3 system

    N. Gayathri;A. K. Raychaudhuri;S. K. Tiwary;R. Gundakaram

  • Low-temperature electronic properties of a normal conducting perovskite oxide (LaNiO3)

    K.P. Rajeev;G.V. Shivashankar;A.K. Raychaudhuri

  • Magnetoresistance of the spin-state-transition compound La1-xSrxCoO3.

    R. Mahendiran;A. K. Raychaudhuri

  • Giant Magnetoresistance in Bulk Samples of La1-xAxMnO3 (A = Sr or Ca)

    R. Mahesh;R. Mahendiran;A.K. Raychaudhuri;C.N.R. Rao

  • Effect of the Internal Pressure Due to the A-Site Cations on the Giant Magnetoresistance and Related Properties of Doped Rare Earth Manganates, Ln1-xAxMnO3 (Ln = La, Nd, Gd, Y; A = Ca, Sr, Ba, Pb)

    R. Mahesh;R. Mahendiran;A.K. Raychaudhuri;C.N.R. Rao

  • Fabrication of nanowires of multicomponent oxides: Review of recent advances

    K. Shantha Shankar;A.K. Raychaudhuri

  • Crystal structure and physical properties of half-doped manganite nanocrystals of less than 100-nm size

    Tapati Sarkar;Barnali Ghosh;A. K. Raychaudhuri;Tapan Chatterji

  • Low frequency elastic properties of glasses at low temperatures—implications on the tunneling model

    A. K. Raychaudhuri;S. Hunklinger

  • High sensitivity NH 3 gas sensor with electrical readout made on paper with perovskite halide as sensor material

    Avisek Maity;A. K. Raychaudhuri;Barnali Ghosh

  • Resistivity, giant magnetoresistance and thermopower in La0.7Sr0.3MnO3 showing a large difference in temperatures corresponding to the ferromagnetic transition and the insulator - metal transition

    R Mahendiran;R Mahesh;A.K Raychaudhuri;C.N.R Rao

  • Identification of the phase responsible for high-temperature superconductivity in $Y-Ba-Cu$ oxides

    C. N. R. Rao;P. Ganguly;A. K. Raychaudhuri;R. A. Mohan Ram

  • Shape transition in ZnO nanostructures and its effect on blue-green photoluminescence

    Manoranjan Ghosh;A K Raychaudhuri

  • Giant magnetoresistance, charge ordering and other novel properties of perovskite manganates

    C.N.R. Rao;R. Mahesh;A.K. Raychaudhuri;R. Mahendiran

  • Photoreactivity of ZnO nanoparticles in visible light: Effect of surface states on electron transfer reaction

    Sunandan Baruah;Sudarson Sekhar Sinha;Barnali Ghosh;Samir Kumar Pal

  • Enhanced ferromagnetic transition temperature in nanocrystalline lanthanum calcium manganese oxide (La0.67Ca0.33MnO3)

    K.Shantha Shankar;Sohini Kar;G.N. Subbanna;A.K. Raychaudhuri

  • Effect of Dimensionality on the Giant Magnetoresistance of the Manganates: A Study of the $(La, Sr)_{n+1}Mn_nO_{3n+1}$ Family

    R. Mahesh;R. Mahendiran;A.K. Raychaudhuri;C.N.R. Rao

  • Low-temperature electronic properties of a normal conducting

    KP Rajeev;GV Shivashankar;AK Raychaudhuri

Frequent Co-Authors

C. N. R. Rao
C. N. R. Rao Jawaharlal Nehru Centre for Advanced Scientific Research
Hariharan Srikanth
Hariharan Srikanth University of South Florida
Swastik Kar
Swastik Kar Northeastern University
Samir Kumar Pal
Samir Kumar Pal S.N. Bose National Centre for Basic Sciences
Samit K. Ray
Samit K. Ray Indian Institute of Technology Kharagpur
Manh-Huong Phan
Manh-Huong Phan University of South Florida
Neil D. Mathur
Neil D. Mathur University of Cambridge
Mark G. Blamire
Mark G. Blamire University of Cambridge
D. D. Sarma
D. D. Sarma Indian Institute of Science
Amit Goyal
Amit Goyal University at Buffalo, State University of New York

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