University of Tokyo
Yasuhiro Shiraki spends much of his time researching Molecular beam epitaxy, Photoluminescence, Condensed matter physics, Epitaxy and Optoelectronics. His Molecular beam epitaxy study incorporates themes from Doping, Heterojunction and Silicon, Germanium. His Photoluminescence research incorporates elements of Quantum well, Spectroscopy, Luminescence and Quantum dot.
The various areas that Yasuhiro Shiraki examines in his Condensed matter physics study include Electron, Fermi gas, Activation energy, Blueshift and Transmission electron microscopy. His Epitaxy research is multidisciplinary, incorporating elements of Molecular physics, Optics, Molecular beam and Analytical chemistry. His research integrates issues of Surface roughness, Surface finish and Nanoscopic scale, Nanotechnology in his study of Optoelectronics.
His primary scientific interests are in Optoelectronics, Photoluminescence, Condensed matter physics, Quantum well and Molecular beam epitaxy. His work deals with themes such as Layer, Substrate and Epitaxy, which intersect with Optoelectronics. The Epitaxy study combines topics in areas such as Transmission electron microscopy, Optics and Analytical chemistry.
Yasuhiro Shiraki combines subjects such as Luminescence, Spectroscopy, Quantum dot, Excitation and Band gap with his study of Photoluminescence. His studies in Condensed matter physics integrate themes in fields like Electron and Germanium. The concepts of his Molecular beam epitaxy study are interwoven with issues in Crystallography, Doping, Diffraction and Mineralogy.
His primary areas of study are Optoelectronics, Condensed matter physics, Molecular beam epitaxy, Germanium and Layer. His is involved in several facets of Optoelectronics study, as is seen by his studies on Photoluminescence, Silicon, Electron mobility and Luminescence. Yasuhiro Shiraki has included themes like Quantum well, Effective mass, Electron and Scattering in his Condensed matter physics study.
His study looks at the intersection of Molecular beam epitaxy and topics like Thin film with Crystallography and Crystallite. His Germanium research focuses on subjects like Doping, which are linked to Field-effect transistor. His Layer research is multidisciplinary, relying on both Relaxation, Buffer and Analytical chemistry.
His scientific interests lie mostly in Optoelectronics, Condensed matter physics, Molecular beam epitaxy, Germanium and Silicon. Optoelectronics is closely attributed to Epitaxy in his research. His Condensed matter physics research incorporates themes from Quantum point contact, Quantum Hall effect, Dielectric and Leakage.
His Molecular beam epitaxy study integrates concerns from other disciplines, such as Crystallography, Crystal structure, Thin film, Analytical chemistry and Substrate. The study incorporates disciplines such as Dipole, Transmission electron microscopy and Superlattice in addition to Silicon. His Photoluminescence research integrates issues from Quantum dot, Wavelength and Self-assembly.
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Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE
Akitoshi Ishizaka;Yasuhiro Shiraki.
Journal of The Electrochemical Society (1986)
Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells
K. Muraki;S. Fukatsu;Y. Shiraki;R. Ito.
Applied Physics Letters (1992)
Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy
H. Sunamura;N. Usami;Y. Shiraki;S. Fukatsu.
Applied Physics Letters (1995)
MOVPE Growth of Cubic GaN on GaAs Using Dimethylhydrazine
S. Miyoshi;K. Onabe;N. Ohkouchi;H. Yaguchi.
Journal of Crystal Growth (1992)
Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties
E. S. Kim;N. Usami;Y. Shiraki.
Applied Physics Letters (1998)
Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot
S. Fukatsu;H. Sunamura;Y. Shiraki;S. Komiyama.
Applied Physics Letters (1997)
Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure
Arnold Alguno;Noritaka Usami;Toru Ujihara;Kozo Fujiwara.
Applied Physics Letters (2003)
Metalorganic vapor phase epitaxy of GaP1-xNx alloys on GaP
S. Miyoshi;H. Yaguchi;K. Onabe;R. Ito.
Applied Physics Letters (1993)
Evidence of Nonlocal Breakdown of the Integer Quantum Hall Effect.
S. Komiyama;Y. Kawaguchi;T. Osada;Y. Shiraki.
Physical Review Letters (1996)
Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy
J. Wu;H. Yaguchi;K. Onabe;R. Ito.
Applied Physics Letters (1997)
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