Analytical chemistry, Annealing, Thin film, Electrical resistivity and conductivity and Condensed matter physics are his primary areas of study. His research on Analytical chemistry focuses in particular on Auger electron spectroscopy. The Annealing study combines topics in areas such as Silicide, Atmospheric temperature range and Microelectronics.
The concepts of his Thin film study are interwoven with issues in Tungsten, Cobalt, Mineralogy, Copper and Nanocrystalline material. His Electrical resistivity and conductivity research includes elements of Grain boundary, Carbon film, Titanium nitride, Sheet resistance and X-ray photoelectron spectroscopy. His Condensed matter physics study incorporates themes from Thermionic emission, Schottky diode and Schottky barrier.
His main research concerns Analytical chemistry, Annealing, Optoelectronics, Thin film and Silicon. His studies in Analytical chemistry integrate themes in fields like Transmission electron microscopy, Substrate and Epitaxy. His Annealing research is multidisciplinary, incorporating elements of Amorphous solid, Electrical resistivity and conductivity and Atomic layer deposition.
His research investigates the link between Optoelectronics and topics such as Metal that cross with problems in Oxide. His Thin film study combines topics from a wide range of disciplines, such as Cobalt, Chemical vapor deposition and Mineralogy. His studies deal with areas such as Rutherford backscattering spectrometry, Ion beam, Composite material and Schottky barrier as well as Silicon.
His primary areas of study are Optoelectronics, Dielectric, Annealing, Atomic layer deposition and Analytical chemistry. His Optoelectronics research integrates issues from Transistor, Metal and Capacitor. His Dielectric study which covers Gate dielectric that intersects with Dielectric strength.
His primary area of study in Annealing is in the field of Forming gas. He interconnects Titanium nitride, Nitride, Tin and Electrical resistivity and conductivity in the investigation of issues within Atomic layer deposition. His work in Analytical chemistry is not limited to one particular discipline; it also encompasses Titanium.
Moshe Eizenberg mainly investigates Optoelectronics, Dielectric, Annealing, Gallium arsenide and Analytical chemistry. His Optoelectronics research incorporates themes from Van der Pauw method, Transient, Electron capture and Capacitor. His research integrates issues of Electronic band structure and Band offset in his study of Dielectric.
Moshe Eizenberg has researched Annealing in several fields, including Oxide, Indium and Atomic layer deposition. His work deals with themes such as Dispersion and Metal, which intersect with Gallium arsenide. His Analytical chemistry study is mostly concerned with Electrical measurements and X-ray photoelectron spectroscopy.
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Uniform tungsten silicide films produced by chemical vapor deposition
Susan G. Telford;Meng Chu Tseng;Michio Aruga;Moshe Eizenberg.
Journal of Fluorine Chemistry (1995)
Carbon interaction with nickel surfaces: Monolayer formation and structural stability
M. Eizenberg;J. M. Blakely.
Journal of Chemical Physics (1979)
Characterization of electroless deposited Co(W,P) thin films for encapsulation of copper metallization
A. Kohn;M. Eizenberg;Y. Shacham-Diamand;Y. Sverdlov.
Materials Science and Engineering A-structural Materials Properties Microstructure and Processing (2001)
Annealing-induced interfacial toughening using a molecular nanolayer
Darshan D. Gandhi;Michael Lane;Yu Zhou;Amit P. Singh.
Interlayer dielectrics for semiconductor technologies
S. P. Murarka;M. Eizenberg;A. K. Sinha.
TiCN: A new chemical vapor deposited contact barrier metallization for submicron devices
M. Eizenberg;K. Littau;S. Ghanayem;A. Mak.
Applied Physics Letters (1994)
New method for determining flat-band voltage in high mobility semiconductors
Roy Winter;Jaesoo Ahn;Paul C. McIntyre;Moshe Eizenberg.
Journal of Vacuum Science & Technology B (2013)
Evaluation of electroless deposited Co(W,P) thin films as diffusion barriers for copper metallization
A. Kohn;M. Eizenberg;Y. Shacham-Diamand;B. Israel.
Microelectronic Engineering (2000)
Atomic layer deposition of tungsten film from WF6/B2H6: Nucleation layer for advanced semiconductor devices
Michael Yang;Hua Chung;Alex Yoon;Hongbin Fang.
Advanced Metallization Conference 2001 (AMC 2001) (2001)
Chemical vapor deposited TiCN: A new barrier metallization for submicron via and contact applications
M. Eizenberg;K. Littau;S. Ghanayem;M. Liao.
Journal of Vacuum Science and Technology (1995)
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