Tokyo Institute of Technology
His primary scientific interests are in Superconductivity, Condensed matter physics, Electrical resistivity and conductivity, Optoelectronics and Analytical chemistry. His study focuses on the intersection of Superconductivity and fields such as Doping with connections in the field of Metal. His Condensed matter physics research integrates issues from Tetragonal crystal system and Crystallography.
Masahiro Hirano has researched Electrical resistivity and conductivity in several fields, including Oxide, Absolute zero, Mineralogy and Crystal structure. His studies examine the connections between Optoelectronics and genetics, as well as such issues in Transistor, with regards to Thin-film transistor, Amorphous solid, Diode, Plasma-enhanced chemical vapor deposition and Barrier layer. The various areas that he examines in his Oxypnictide study include Pnictogen and Pressure dependence.
Masahiro Hirano mainly focuses on Condensed matter physics, Superconductivity, Analytical chemistry, Electrical resistivity and conductivity and Doping. He focuses mostly in the field of Condensed matter physics, narrowing it down to topics relating to Tetragonal crystal system and, in certain cases, Orthorhombic crystal system. His study in Oxypnictide, Iron-based superconductor, Pseudogap and Transition temperature is carried out as part of his studies in Superconductivity.
His Analytical chemistry research is multidisciplinary, incorporating perspectives in Amorphous solid, Thin film, Mineralogy and Band gap. His studies in Amorphous solid integrate themes in fields like Transistor, Activation energy, Dangling bond and Thin-film transistor. His Doping study which covers Epitaxy that intersects with Electron mobility, Semiconductor and Annealing.
Condensed matter physics, Superconductivity, Doping, Analytical chemistry and Amorphous solid are his primary areas of study. His work deals with themes such as Orthorhombic crystal system, Density functional theory and Crystallite, which intersect with Condensed matter physics. His research in Superconductivity intersects with topics in Pulsed laser deposition, Pressure dependence, Epitaxy and Iron based.
His Amorphous solid study combines topics from a wide range of disciplines, such as Activation energy, Dangling bond, Saturation and Optoelectronics, Photoluminescence. Masahiro Hirano interconnects Yttria-stabilized zirconia, Transistor and Mineralogy in the investigation of issues within Optoelectronics. As a member of one scientific family, Masahiro Hirano mostly works in the field of Transistor, focusing on Crystal and, on occasion, Electrical resistivity and conductivity.
Masahiro Hirano mainly focuses on Superconductivity, Condensed matter physics, Amorphous solid, Antiferromagnetism and Relaxation rate. His studies deal with areas such as Orthorhombic crystal system, Doping and Pressure dependence as well as Superconductivity. He has included themes like Dangling bond, Absorption, Crystallographic defect, Molecular physics and Optoelectronics in his Amorphous solid study.
His Optoelectronics study combines topics in areas such as Saturation, Transistor, Biasing and Contact resistance. The Antiferromagnetism study combines topics in areas such as Magnetization, Magnetic moment, Synchrotron, Diffraction and Fermi energy. His study in Relaxation rate is interdisciplinary in nature, drawing from both Normal state, Atmospheric temperature range, Density of states, Isotropy and Anisotropy.
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Iron-Based Layered Superconductor La[O1-xFx]FeAs (x = 0.05−0.12) with Tc = 26 K
Yoichi Kamihara;Takumi Watanabe;Masahiro Hirano;Hideo Hosono.
Journal of the American Chemical Society (2008)
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
Kenji Nomura;Hiromichi Ohta;Akihiro Takagi;Toshio Kamiya.
Iron-Based Layered Superconductor: LaOFeP
Yoichi Kamihara;Hidenori Hiramatsu;Masahiro Hirano;Ryuto Kawamura.
Journal of the American Chemical Society (2006)
Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors
Kenji Nomura;Akihiro Takagi;Toshio Kamiya;Hiromichi Ohta.
Japanese Journal of Applied Physics (2006)
Superconductivity at 43 K in an iron-based layered compound LaO 1-x F x FeAs
Hiroki Takahashi;Kazumi Igawa;Kazunobu Arii;Yoichi Kamihara.
Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3
Hiromichi Ohta;Hiromichi Ohta;SungWng Kim;Yoriko Mune;Teruyasu Mizoguchi.
Nature Materials (2007)
42.1: Invited Paper: Improved Amorphous In‐Ga‐Zn‐O TFTs
Ryo Hayashi;Ayumu Sato;Masato Ofuji;Katsumi Abe.
SID Symposium Digest of Technical Papers (2008)
High-density electron anions in a nanoporous single crystal: [Ca24Al28O64]4+(4e-).
Satoru Matsuishi;Yoshitake Toda;Masashi Miyakawa;Katsuro Hayashi.
Light-induced conversion of an insulating refractory oxide into a persistent electronic conductor.
Katsuro Hayashi;Satoru Matsuishi;Toshio Kamiya;Masahiro Hirano.
Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4
Akihiro Takagi;Kenji Nomura;Hiromichi Ohta;Hiromichi Ohta;Hiroshi Yanagi.
Thin Solid Films (2005)
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