D-Index & Metrics Best Publications
lester f eastman

lester f eastman

Cornell University
United States

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Semiconductor

His main research concerns Optoelectronics, Condensed matter physics, Wurtzite crystal structure, Electron and Epitaxy. His Optoelectronics study integrates concerns from other disciplines, such as Molecular beam epitaxy and Absorption. His Condensed matter physics research includes themes of Hall effect and Semiconductor.

His Wurtzite crystal structure research is multidisciplinary, relying on both Indium nitride, Nitride, Electron mobility and Drift velocity. He has included themes like Sapphire and Analytical chemistry in his Epitaxy study. His Analytical chemistry research is multidisciplinary, incorporating perspectives in Solid-state physics and Silicon.

His most cited work include:

  • Transient electron transport in wurtzite GaN, InN, and AlN (462 citations)
  • Electron transport in wurtzite indium nitride (272 citations)
  • Surface charge accumulation of InN films grown by molecular-beam epitaxy (263 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Optoelectronics, Epitaxy, Condensed matter physics, Heterojunction and Molecular beam epitaxy. His Optoelectronics study incorporates themes from Transistor and Laser, Optics. He interconnects Substrate, Impurity, Solid-state physics and Analytical chemistry in the investigation of issues within Epitaxy.

His Condensed matter physics research is multidisciplinary, incorporating elements of Electron, Drift velocity and Wurtzite crystal structure. Lester F. Eastman has researched Wurtzite crystal structure in several fields, including Wide-bandgap semiconductor, Indium nitride, Nitride and Electric field. His Molecular beam epitaxy research is multidisciplinary, incorporating perspectives in Sapphire, Beam, Hall effect and Photoluminescence.

He most often published in these fields:

  • Optoelectronics (61.96%)
  • Epitaxy (21.74%)
  • Condensed matter physics (20.65%)

What were the highlights of his more recent work (between 2006-2017)?

  • Optoelectronics (61.96%)
  • Gallium nitride (14.67%)
  • Condensed matter physics (20.65%)

In recent papers he was focusing on the following fields of study:

Lester F. Eastman spends much of his time researching Optoelectronics, Gallium nitride, Condensed matter physics, Electron transport chain and Indium nitride. The study incorporates disciplines such as Passivation and Laser in addition to Optoelectronics. His work carried out in the field of Gallium nitride brings together such families of science as Wide-bandgap semiconductor, Conductivity and Analytical chemistry.

His research in Condensed matter physics focuses on subjects like Drift velocity, which are connected to Steady state. Indium nitride is closely attributed to Doping in his research. As a member of one scientific family, he mostly works in the field of Wurtzite crystal structure, focusing on Electron mobility and, on occasion, Phenomenological model.

Between 2006 and 2017, his most popular works were:

  • High performance AlGaN/GaN power switch with HfO2 insulation (74 citations)
  • Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures (36 citations)
  • Photodetectors based on intersubband transitions using III-nitride superlattice structures. (28 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Electron

Lester F. Eastman mainly investigates Optoelectronics, Gallium nitride, Electron mobility, Electron transport chain and Condensed matter physics. The various areas that Lester F. Eastman examines in his Optoelectronics study include MISFET and Passivation. As part of the same scientific family, Lester F. Eastman usually focuses on Gallium nitride, concentrating on Analytical chemistry and intersecting with Molecular beam epitaxy, Hall effect, Photoconductivity and Conductivity.

His Electron mobility research incorporates elements of Drift velocity, Zinc, Wurtzite crystal structure and Phenomenological model. Lester F. Eastman integrates many fields, such as Electron transport chain, Doping and Indium nitride, in his works. His Heterojunction research integrates issues from AND gate, Breakdown voltage, Optical rectification, Light-emitting diode and Quantum well.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Transient electron transport in wurtzite GaN, InN, and AlN

Brian E. Foutz;Stephen K. O’Leary;Michael S. Shur;Lester F. Eastman.
Journal of Applied Physics (1999)

693 Citations

Surface charge accumulation of InN films grown by molecular-beam epitaxy

Hai Lu;William J. Schaff;Lester F. Eastman;C. E. Stutz.
Applied Physics Letters (2003)

403 Citations

Electron transport in wurtzite indium nitride

Stephen K. O’Leary;Brian E. Foutz;Michael S. Shur;Udayan V. Bhapkar.
Journal of Applied Physics (1998)

402 Citations

Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

Hai Lu;William J. Schaff;Jeonghyun Hwang;Hong Wu.
Applied Physics Letters (2001)

369 Citations

Improvement on epitaxial grown of InN by migration enhanced epitaxy

Hai Lu;William J. Schaff;Jeonghyun Hwang;Hong Wu.
Applied Physics Letters (2000)

286 Citations

Surface and interface depletion corrections to free carrier-density determinations by hall measurements

Amitabh Chandra;Colin E.C. Wood;David W. Woodard;Lester F. Eastman.
Solid-state Electronics (1979)

241 Citations

Ultra-low resistive ohmic contacts on n-GaN using Si implantation

Jinwook Burm;Kenneth Chu;William A. Davis;William J. Schaff.
Applied Physics Letters (1997)

214 Citations

GaN/AlN-based quantum-well infrared photodetector for 1.55 μm

Daniel Hofstetter;Sven-Silvius Schad;Hong Wu;William J. Schaff.
Applied Physics Letters (2003)

188 Citations

Steady-State and Transient Electron Transport Within the III–V Nitride Semiconductors, GaN, AlN, and InN: A Review

Stephen K. O'Leary;Brian E. Foutz;Brian E. Foutz;Michael S. Shur;Lester F. Eastman.
Journal of Materials Science: Materials in Electronics (2006)

174 Citations

Surface chemical modification of InN for sensor applications

Hai Lu;William J. Schaff;Lester F. Eastman.
Journal of Applied Physics (2004)

152 Citations

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