Cornell University
United States
His main research concerns Optoelectronics, Condensed matter physics, Wurtzite crystal structure, Electron and Epitaxy. His Optoelectronics study integrates concerns from other disciplines, such as Molecular beam epitaxy and Absorption. His Condensed matter physics research includes themes of Hall effect and Semiconductor.
His Wurtzite crystal structure research is multidisciplinary, relying on both Indium nitride, Nitride, Electron mobility and Drift velocity. He has included themes like Sapphire and Analytical chemistry in his Epitaxy study. His Analytical chemistry research is multidisciplinary, incorporating perspectives in Solid-state physics and Silicon.
His scientific interests lie mostly in Optoelectronics, Epitaxy, Condensed matter physics, Heterojunction and Molecular beam epitaxy. His Optoelectronics study incorporates themes from Transistor and Laser, Optics. He interconnects Substrate, Impurity, Solid-state physics and Analytical chemistry in the investigation of issues within Epitaxy.
His Condensed matter physics research is multidisciplinary, incorporating elements of Electron, Drift velocity and Wurtzite crystal structure. Lester F. Eastman has researched Wurtzite crystal structure in several fields, including Wide-bandgap semiconductor, Indium nitride, Nitride and Electric field. His Molecular beam epitaxy research is multidisciplinary, incorporating perspectives in Sapphire, Beam, Hall effect and Photoluminescence.
Lester F. Eastman spends much of his time researching Optoelectronics, Gallium nitride, Condensed matter physics, Electron transport chain and Indium nitride. The study incorporates disciplines such as Passivation and Laser in addition to Optoelectronics. His work carried out in the field of Gallium nitride brings together such families of science as Wide-bandgap semiconductor, Conductivity and Analytical chemistry.
His research in Condensed matter physics focuses on subjects like Drift velocity, which are connected to Steady state. Indium nitride is closely attributed to Doping in his research. As a member of one scientific family, he mostly works in the field of Wurtzite crystal structure, focusing on Electron mobility and, on occasion, Phenomenological model.
Lester F. Eastman mainly investigates Optoelectronics, Gallium nitride, Electron mobility, Electron transport chain and Condensed matter physics. The various areas that Lester F. Eastman examines in his Optoelectronics study include MISFET and Passivation. As part of the same scientific family, Lester F. Eastman usually focuses on Gallium nitride, concentrating on Analytical chemistry and intersecting with Molecular beam epitaxy, Hall effect, Photoconductivity and Conductivity.
His Electron mobility research incorporates elements of Drift velocity, Zinc, Wurtzite crystal structure and Phenomenological model. Lester F. Eastman integrates many fields, such as Electron transport chain, Doping and Indium nitride, in his works. His Heterojunction research integrates issues from AND gate, Breakdown voltage, Optical rectification, Light-emitting diode and Quantum well.
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Transient electron transport in wurtzite GaN, InN, and AlN
Brian E. Foutz;Stephen K. O’Leary;Michael S. Shur;Lester F. Eastman.
Journal of Applied Physics (1999)
Surface charge accumulation of InN films grown by molecular-beam epitaxy
Hai Lu;William J. Schaff;Lester F. Eastman;C. E. Stutz.
Applied Physics Letters (2003)
Electron transport in wurtzite indium nitride
Stephen K. O’Leary;Brian E. Foutz;Michael S. Shur;Udayan V. Bhapkar.
Journal of Applied Physics (1998)
Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy
Hai Lu;William J. Schaff;Jeonghyun Hwang;Hong Wu.
Applied Physics Letters (2001)
Improvement on epitaxial grown of InN by migration enhanced epitaxy
Hai Lu;William J. Schaff;Jeonghyun Hwang;Hong Wu.
Applied Physics Letters (2000)
Surface and interface depletion corrections to free carrier-density determinations by hall measurements
Amitabh Chandra;Colin E.C. Wood;David W. Woodard;Lester F. Eastman.
Solid-state Electronics (1979)
Ultra-low resistive ohmic contacts on n-GaN using Si implantation
Jinwook Burm;Kenneth Chu;William A. Davis;William J. Schaff.
Applied Physics Letters (1997)
GaN/AlN-based quantum-well infrared photodetector for 1.55 μm
Daniel Hofstetter;Sven-Silvius Schad;Hong Wu;William J. Schaff.
Applied Physics Letters (2003)
Steady-State and Transient Electron Transport Within the III–V Nitride Semiconductors, GaN, AlN, and InN: A Review
Stephen K. O'Leary;Brian E. Foutz;Brian E. Foutz;Michael S. Shur;Lester F. Eastman.
Journal of Materials Science: Materials in Electronics (2006)
Surface chemical modification of InN for sensor applications
Hai Lu;William J. Schaff;Lester F. Eastman.
Journal of Applied Physics (2004)
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