What is he best known for?
The fields of study he is best known for:
- Transistor
- Integrated circuit
- Voltage
The scientist’s investigation covers issues in Voltage, Electrical engineering, Flash memory, Computer hardware and Memory cell.
Fu-Chang Hsu interconnects Cellular array and Electronic engineering in the investigation of issues within Voltage.
By researching both Flash memory and Erasure, he produces research that crosses academic boundaries.
His Sense amplifier and Non-volatile memory investigations are all subjects of Computer hardware research.
His Non-volatile memory study incorporates themes from Overhead, Byte and Embedded system.
His Memory cell study combines topics from a wide range of disciplines, such as Computer data storage and Static random-access memory.
His most cited work include:
- Novel monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout (157 citations)
- Dram-like nvm memory array and sense amplifier design for high temperature and high endurance operation (135 citations)
- Bit-refreshable method and circuit for refreshing a nonvolatile flash memory (93 citations)
What are the main themes of his work throughout his whole career to date?
His scientific interests lie mostly in Flash memory, Electrical engineering, Computer hardware, Voltage and Flash.
His Flash memory research incorporates themes from NAND gate, Signal, Electronic circuit and Electronic engineering.
In the subject of general Computer hardware, his work in Semiconductor memory, EEPROM, Computer memory and Sense amplifier is often linked to Block, thereby combining diverse domains of study.
His study in Voltage is interdisciplinary in nature, drawing from both EPROM, Chip and Line.
He connects Flash with Byte in his study.
His research in Transistor focuses on subjects like Non-volatile memory, which are connected to Reading.
He most often published in these fields:
- Flash memory (52.75%)
- Electrical engineering (47.25%)
- Computer hardware (40.66%)
What were the highlights of his more recent work (between 2010-2012)?
- Computer hardware (40.66%)
- Flash (30.77%)
- EEPROM (20.88%)
In recent papers he was focusing on the following fields of study:
The scientist’s investigation covers issues in Computer hardware, Flash, EEPROM, Non-volatile memory and NAND gate.
His Computer hardware study deals with Embedded system intersecting with Computer memory.
His studies link Transistor with Non-volatile memory.
His Transistor research is under the purview of Electrical engineering.
His NAND gate study frequently draws parallels with other fields, such as Flash memory.
His work carried out in the field of Flash memory brings together such families of science as Node and Electronic engineering.
Between 2010 and 2012, his most popular works were:
- Dram-like nvm memory array and sense amplifier design for high temperature and high endurance operation (135 citations)
- Universal timing waveforms sets to improve random access read and write speed of memories (18 citations)
- EEPROM-based, data-oriented combo NVM design (15 citations)
This overview was generated by a machine learning system which analysed the scientist’s
body of work. If you have any feedback, you can
contact us
here.
