University of California, San Diego
2002 - IEEE Fellow For contributions to molecular beam epitaxy of novel III-V semiconductors
2002 - Fellow of American Physical Society (APS) Citation For contributions in molecular beam epitaxy of novel IIIV semiconductors
Condensed matter physics, Photoluminescence, Quantum well, Molecular beam epitaxy and Optoelectronics are his primary areas of study. The various areas that Charles W. Tu examines in his Condensed matter physics study include Scattering, Electron and Atomic physics. His Photoluminescence study integrates concerns from other disciplines, such as Band offset, Thin film, Crystallographic defect, Excitation and Wide-bandgap semiconductor.
His Quantum well study incorporates themes from Spectroscopy, Monolayer, Molecular physics, Cyclotron resonance and Biexciton. His Molecular beam epitaxy research is multidisciplinary, incorporating perspectives in Substrate, Molecular beam and Analytical chemistry. His Optoelectronics study combines topics in areas such as Plasma and Laser.
His primary scientific interests are in Optoelectronics, Condensed matter physics, Molecular beam epitaxy, Photoluminescence and Quantum well. Many of his studies involve connections with topics such as Optics and Optoelectronics. His Condensed matter physics research integrates issues from Quantum dot, Spectroscopy and Electron.
His Molecular beam epitaxy research is multidisciplinary, relying on both Thin film, Electron diffraction, Substrate and Analytical chemistry. His Analytical chemistry research incorporates elements of Inorganic chemistry, Triethylgallium, Chemical beam epitaxy and Nitrogen. As a member of one scientific family, Charles W. Tu mostly works in the field of Photoluminescence, focusing on Band gap and, on occasion, Electronic band structure.
Charles W. Tu mainly investigates Optoelectronics, Nanowire, Nanotechnology, Condensed matter physics and Photoluminescence. His study in Optoelectronics is interdisciplinary in nature, drawing from both Molecular beam epitaxy and Exciton. He interconnects Nanolithography and Nitride in the investigation of issues within Molecular beam epitaxy.
He studied Nanotechnology and Band gap that intersect with Solar cell. The concepts of his Condensed matter physics study are interwoven with issues in Quantum dot, Spin polarization and Semiconductor. His Photoluminescence study results in a more complete grasp of Analytical chemistry.
Charles W. Tu focuses on Optoelectronics, Photoluminescence, Nanowire, Nanotechnology and Nanorod. His Optoelectronics study combines topics from a wide range of disciplines, such as Exciton and Raman spectroscopy. The subject of his Photoluminescence research is within the realm of Analytical chemistry.
His work carried out in the field of Nanowire brings together such families of science as Molecular beam epitaxy, Spontaneous emission, Light emission and Surface plasmon. His studies in Molecular beam epitaxy integrate themes in fields like Molecular physics, Nanolithography and Nitride. Charles W. Tu combines subjects such as Condensed matter physics and Coating with his study of Spontaneous emission.
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Chemical mapping of semiconductor interfaces at near atomic resolution.
A Ourmazd;DW Taylor;J Cunningham;CW Tu.
Physical Review Letters (1989)
Ultrafast phase relaxation of excitons via exciton-exciton and exciton-electron collisions.
L. Schultheis;J. Kuhl;A. Honold;C. W. Tu.
Physical Review Letters (1986)
Density of states and de Haas-van Alphen effect in two-dimensional electron systems.
J. P. Eisenstein;H. L. Stormer;V. Narayanamurti;A. Y. Cho.
Physical Review Letters (1985)
Collision broadening of two-dimensional excitons in a GaAs single quantum well
A. Honold;L. Schultheis;J. Kuhl;C. W. Tu.
Physical Review B (1989)
Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
I. A. Buyanova;W. M. Chen;G. Pozina;J. P. Bergman.
Applied Physics Letters (1999)
Nature of the fundamental band gap in GaNxP1−x alloys
W. Shan;W. Walukiewicz;K. M. Yu;J. Wu.
Applied Physics Letters (2000)
Optical dephasing of homogeneously broadened two-dimensional exciton transitions in GaAs quantum wells.
L. Schultheis;A. Honold;J. Kuhl;K. Köhler.
Physical Review B (1986)
Donor neutralization in GaAs(Si) by atomic hydrogen
J. Chevallier;W. C. Dautremont‐Smith;C. W. Tu;S. J. Pearton.
Applied Physics Letters (1985)
GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy
H. P. Xin;C. W. Tu.
Applied Physics Letters (1998)
Lifetime enhancement of two-dimensional excitons by the quantum-confined Stark effect.
H. J. Polland;L. Schultheis;J. Kuhl;E. O. Göbel.
Physical Review Letters (1985)
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