53rd European Solid-State Device Research Conference

Top Research Topics at European Solid-State Device Research Conference?

• Optoelectronics (61.21%)
• Electronic engineering (22.51%)
• Silicon (20.63%)

The discussions in European Solid-State Device Research Conference mainly cover the fields of Optoelectronics, Electronic engineering, Silicon, Electrical engineering and Transistor. In European Solid-State Device Research Conference, Threshold voltage, Logic gate and MOSFET are investigated in conjunction with one another to address concerns in Optoelectronics research. The event focuses on MOSFET research which is adjacent to topics in Silicon on insulator.

Electronic circuit, Bipolar junction transistor, Dielectric and Silicon-germanium are some topics wherein Electronic engineering research discussed in it have an impact. Bipolar junction transistor and Heterojunction are closely related fields of research discussed in the event. The research on Silicon tackled can also make contributions to studies in the areas of Annealing (metallurgy), Epitaxy and Analytical chemistry.

Voltage is the primary subject of Electrical engineering works presented in the conference. Cmos process and Semiconductor device modeling are all aspects of CMOS research featured in it.

What are the most cited papers published at the conference?

• Junctionless nanowire transistor (JNT): Properties and design guidelines (284 citations)
• Junctionless nanowire transistor (JNT): Properties and design guidelines (158 citations)
• Strongly directional emission from AlGaAs/GaAs light emitting diodes (112 citations)

Research areas of the most cited articles at European Solid-State Device Research Conference:

The conference articles mainly deal with areas of study such as Optoelectronics, Electronic engineering, Electrical engineering, CMOS and MOSFET. The studies on Optoelectronics discussed at the most cited papers can also contribute to research in the domains of Field-effect transistor and Transistor. The most cited papers hold forums on Electronic engineering that merge themes from other disciplines such as Threshold voltage, Non-volatile memory, Scaling and Voltage.

What topics the last edition of the conference is best known for?

• Quantum mechanics
• Electrical engineering
• Electron

The previous edition focused in particular on these issues:

Optoelectronics, Electronic engineering, Logic gate, Transistor and Nanotechnology are the subjects of interest in European Solid-State Device Research Conference. European Solid-State Device Research Conference explores topics in Optoelectronics which can be helpful for research in disciplines like Electrical engineering and MOSFET. It primarily dealt with subjects of interest in Electronic engineering but also expanded the discussion to include studies in

• Resistive random-access memory that intertwine with fields like Reset (computing),
• Threshold voltage which intersects with area such as Semiconductor device modeling..

Aside from discussions in Logic gate, European Solid-State Device Research Conference also deals with the subject of Nanowire which intersects with Gallium arsenide disciplines. Research in Gallium nitride and the interrelating topic of High-electron-mobility transistor, Analytical chemistry and Schottky diode were among the subjects of interest in the Transistor studies discussed in it. The Nanotechnology works featured in the event incorporate elements from Field-effect transistor, Condensed matter physics and Electrode.

The most cited articles from the last conference are:

• Cryogenic characterization of 28 nm bulk CMOS technology for quantum computing (42 citations)
• Nanometer CMOS characterization and compact modeling at deep-cryogenic temperatures (25 citations)
• Negative capacitance field effect transistors; capacitance matching and non-hysteretic operation (19 citations)

Papers citation over time

A key indicator for each conference is its effectiveness in reaching other researchers with the papers published at that venue.

The chart below presents the interquartile range (first quartile 25%, median 50% and third quartile 75%) of the number of citations of articles over time.

Top authors and change over time

The top authors publishing at European Solid-State Device Research Conference (based on the number of publications) are:

• Adrian M. Ionescu (10 papers) published 3 papers at the last edition, 4 less than at the previous edition,
• Gerard Ghibaudo (7 papers) published 1 paper at the last edition, 5 less than at the previous edition,
• Jean-Pierre Raskin (7 papers) published 3 papers at the last edition, 1 less than at the previous edition,
• Denis Flandre (6 papers) published 4 papers at the last edition, 2 more than at the previous edition,
• Bertrand Parvais (5 papers) published 3 papers at the last edition, 1 more than at the previous edition.

The overall trend for top authors publishing at this conference is outlined below. The chart shows the number of publications at each edition of the conference for top authors.

Top affiliations and change over time

Only papers with recognized affiliations are considered

The top affiliations publishing at European Solid-State Device Research Conference (based on the number of publications) are:

• STMicroelectronics (24 papers) published 6 papers at the last edition, 12 less than at the previous edition,
• Katholieke Universiteit Leuven (20 papers) published 14 papers at the last edition, 8 more than at the previous edition,
• École Polytechnique Fédérale de Lausanne (16 papers) published 6 papers at the last edition, 4 less than at the previous edition,
• IBM (10 papers) published 3 papers at the last edition, 4 less than at the previous edition,
• Université catholique de Louvain (9 papers) published 4 papers at the last edition, 1 less than at the previous edition.

The overall trend for top affiliations publishing at this conference is outlined below. The chart shows the number of publications at each edition of the conference for top affiliations.

Publication chance based on affiliation

The publication chance index shows the ratio of articles published by the best research institutions at the conference edition to all articles published within that conference. The best research institutions were selected based on the largest number of articles published during all editions of the conference.

The chart below presents the percentage ratio of articles from top institutions (based on their ranking of total papers).Top affiliations were grouped by their rank into the following tiers: top 1-10, top 11-20, top 21-50, and top 51+. Only articles with a recognized affiliation are considered.

During the most recent 2017 edition, 3.80% of publications had an unrecognized affiliation. Out of the publications with recognized affiliations, 43.42% were posted by at least one author from the top 10 institutions publishing at the conference. Another 13.16% included authors affiliated with research institutions from the top 11-20 affiliations. Institutions from the 21-50 range included 15.79% of all publications and 27.63% were from other institutions.

Returning Authors Index

A very common phenomenon observed among researchers publishing scientific articles is the intentional selection of conferences they have already attended in the past. In particular, it is worth analyzing the case when the authors participate in the same conference from year to year.

The Returning Authors Index presented below illustrates the ratio of authors who participated in both a given as well as the previous edition of the conference in relation to all participants in a given year.

Returning Institution Index

The graph below shows the Returning Institution Index, illustrating the ratio of institutions that participated in both a given and the previous edition of the conference in relation to all affiliations present in a given year.

The experience to innovation index

Our experience to innovation index was created to show a cross-section of the experience level of authors publishing at a conference. The index includes the authors publishing at the last edition of a conference, grouped by total number of publications throughout their academic career (P) and the total number of citations of these publications ever received (C).

The group intervals were selected empirically to best show the diversity of the authors' experiences, their labels were selected as a convenience, not as judgment. The authors were divided into the following groups:

• Novice - P < 5 or C < 25 (the number of publications less than 5 or the number of citations less than 25),
• Competent - P < 10 or C < 100 (the number of publications less than 10 or the number of citations less than 100),
• Experienced - P < 25 or C < 625 (the number of publications less than 25 or the number of citations less than 625),
• Master - P < 50 or C < 2500 (the number of publications less than 50 or the number of citations less than 2500),
• Star - P ≥ 50 and C ≥ 2500 (both the number of publications greater than 50 and the number of citations greater than 2500).

The chart below illustrates experience levels of first authors in cases of publications with multiple authors.